Vishay's P-channel Gen III MOSFETs offer industry-low RDS(on)

MALVERN,USA: Vishay Intertechnology Inc.,extended its offering of TrenchFET p-channel Gen III power MOSFETs with new devices in the PowerPAK,

ChipFET and PowerPAK 1212-8S packages.

Designed to increase power efficiency in mobile computing and industrial control devices, the Vishay Siliconix MOSFETs released feature the industry's lowest on-resistance for -12 V and -20 V devices at -4.5 V and -2.5 V gate drives in the 3.0 mm by 1.9 mm and 3.3 mm by 3.3 mm footprint areas.

The Si5411EDU, Si5415AEDU, and SiSS23DN are optimized for load, battery, and supervisory switches in a wide range of applications, including power management in smartphones, tablets, notebooks, industrial sensors, and POL modules.

The devices' industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.

In applications where saving PCB space is critical, the -12 V Si5411EDU offers low on-resistance of 8.2 milliohms and 11.7 milliohms in the 3.0 mm by 1.9 mm PowerPAK ChipFET package. When a higher voltage rating is needed, the -20 V Si5415AEDU features values of 9.6 milliohms and 13.2 milliohms.

Both devices provide typical ESD protection of 5000 V. For applications requiring extremely low on-resistance, the SiSS23DN provides values of 4.5 milliohms and 6.3 milliohms in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.

The Si5411EDU, Si5415AEDU, and SiSS23DN are 100 percent Rg- and UIS-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.