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Samsung and ST sign strategic agreement to expand 28nm FD-SOI technology

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Harmeet
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SOUTH KOREA & SWITZERLAND: STMicroelectronics and Samsung Electronics Co. Ltd announced the signing of a comprehensive agreement on 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.

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The licensing accord provides customers with advanced manufacturing solutions from Samsung's state-of-the-art 300mm facilities and assures the industry of high-volume production for ST's FD-SOI technology. FD-SOI technology at 28nmdelivers faster, cooler, and simpler semiconductor devices to meet the continuing demand for higher-performance, lower-power systems-on-chips for next-generation electronic products, such as mobile and consumer applications.

The agreement, on 28nmFD-SOI technology, encompasses ST's fully developed process technology and design enablement ecosystem.ST has already proven the speed-power and simplicity benefits of 28nm FD-SOI and continues to build design interest and momentum.

The agreement complements ST's advanced 28nm FD-SOI manufacturing capabilities at its 300mm facility in Crolles, France, ensuring a multi-source option for 28nm FD-SOI products and providing customers with the benefit of both Samsung's and ST's deep experience and comprehensive knowledge of high-volume manufacturing technology. The Samsung 28nm FD-SOI process will be qualified in early 2015 for volume production.

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