Samsung commences memory fabrication operation

XI'AN, CHINA: Samsung Electronics, a provider in memory semiconductor technology, announced that its memory fabrication line in Xi'an China has begun full-scale manufacturing operations. The new facility will manufacture Samsung's NAND flash memory chips: 3D V-NAND.

Construction of the new manufacturing facility took 20 months since Samsung broke ground in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Electronics vice chairman and CEO, Dr. Kwon said: "The city of Xi'an was the starting point of the Silk Road, which had performed a key role in bridging cultures from the East and the West. We expect that our new facility in Xi'an - the fruit of close cooperation with China, will mark the crowning of a 21st century Silk Road."

Shaanxi province governor Lou Qinjian noted  the new Xi'an fab highlights and the special partnership and efficient cooperation between China and Korea.

By commencing operations of its Xi'an fabrication line, Samsung has secured a memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here. It is also laying the foundation for a stable supply of memory products to its customers.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.