NXP Semiconductors intros dual Power-SO8 MOSFETs

NETHERLANDS/UK: NXP semiconductors have introduced the LFPAK56D portfolio, a range of dual Power-SO8 MOSFETs. As per the company, it is designed for automotive applications such as fuel injection, ABS and stability control. The LFPAK56D range is in volume production. LFPAK56D combines two fully isolated MOSFETs into a single package designed to meet the rigorous requirements of the automotive industry.

This new range of dual Power-SO8 MOSFETs offers complete flexibility and freedom to pick the device that best matches the application and module requirements, while also achieving a much higher power density. Designing with LFPAK56D lowers costs through simpler PCB assembly, ease of inspection and shrinking module size. Smaller modules also means a significant saving in weight, which is particularly attractive to manufacturers focused on reducing CO2 emissions.

"We believe that LFPAK56D will set a new industry benchmark for automotive MOSFETs, enabling OEMs to maximize efficiency and achieve significant cost savings through the development of smaller, more compact products," said Steve Sellick, business development manager, automotive MOSFETs, NXP Semiconductors. "Our portfolio of automotive qualified Power-SO8 MOSFETs is the most comprehensive in the industry, providing our customers the broadest possible choice when designing safety-critical automotive applications."

The LFPAK56D features dual power-SO8 MOSFET, 77 per cent smaller footprint than the equivalent DPAK solution, copper clip technology, low package resistance and inductance, low thermal resistance, high current transient robustness, automotive AEC-Q101 qualified to 175 degree centigrade.