New family of high performance common-drain MOSFETs

SUNNYVALE, USA: Alpha and Omega Semiconductor Ltd (AOS), a designer, developer and global supplier of a broad range of power semiconductors and power ICs, released a new dual MOSFET family in the common-drain configuration in both DFN 5x6 and Micro-DFN 3.2x2 packages.

These devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection. The products provide ultra-low RSS (source-to-source resistance) of less than 10mOhms at 10V gate drive.

AON6810, AON6812, and AOC4810 provide ideal solutions for enhancing battery pack performance in the latest generation Ultrabooks and tablets, where low conduction loss is a must for optimizing battery life.

The new devices use the latest AlphaMOS technology to accomplish very low RDS(ON) along with 4kV ESD protection to enhance battery pack safety. AON6810 and AON6812 use a bottom-exposed DFN5x6 package for enhanced thermal capability. The AON6812 features a low 8mOhm max total RSS (source-to-source) resistance at 10V drive.

Rated with a 30V breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and heat dissipation. The AON6810 provides an extra level of protection with an internal temperature sense diode that provides first-hand thermal information to the battery control IC.

By utilizing the temperature sense pins of AON6810, designers can accurately monitor the MOSFETs' thermal condition in a real time basis to prevent any abnormal overheating.