Micron unveils 16-nm flash memory technology

BOISE, USA: Micron Technology Inc. announced that it is sampling next-generation, 16-nanometer (nm) process technology, enabling the industry's smallest 128-gigabit (Gb) multi-level cell (MLC) NAND Flash memory devices.

The 16nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device. It solidifies Micron's leadership position in storage technology development and delivers on the company's vision to provide the most advanced semiconductor solutions.

Micron's 128Gb MLC NAND Flash memory devices are targeted at applications like consumer SSDs, removable storage (USB drives and Flash cards), tablets, ultrathin devices, mobile handsets and data center cloud storage.

The new 128Gb NAND Flash memory provides the greatest number of bits per square millimeter and lowest cost of any MLC device in existence. In fact, the new technology could create nearly 6TB of storage on a single wafer.

Micron is sampling the 16nm, 128Gb MLC NAND with select partners now and plans to be in full production in 4Q13. Micron is also developing a new line of solid-state drive (SSD) solutions based on these devices and expects to ship SSDs with 16nm Flash in 2014.