FLASH MEMORY SUMMIT, USA: LSI Corp. is demonstrating its latest LSI SandForce flash controller technology innovations at the Flash Memory Summit, taking place this week at the Santa Clara Convention Center.
Greg Huff, LSI senior VP and CTO, will deliver a keynote presentation, and additional LSI flash experts will present and participate in forum sessions to provide their insight and perspective into the latest flash memory-based technologies and trends and how they are changing the IT landscape.
LSI demonstrations include LSI SHIELD technology, an advanced error-correction method designed to deliver enterprise-class SSD endurance and data integrity, even while using less expensive flash memory that typically has higher error rates. SHIELD technology is a unique implementation of low-density parity-check (LDPC) code and digital signal processing (DSP) that will be available in next-generation SandForce flash controllers. The technology combines hard-decision, soft-decision and DSP to provide a comprehensive error correction code (ECC) solution that is optimized for flash memory.
LSI SHIELD technology offers advantages over existing LDPC implementations by uniquely combining several features:
Adaptive code rate: dynamically balances performance and reliability over the life of the SSD
Smart handling of transient noise: reduces overall LDPC latency for improved ECC efficiency
Multi-level ECC schema: judiciously applies stronger levels of ECC to minimize latency while maintaining optimal flash performance.
"While the value proposition of NAND flash memory grows and is driving the adoption of flash-based storage solutions, the tradeoff is that today's smaller fabrication geometries come with lower reliability and a shorter lifespan," said Huibert Verhoeven, VP and GM, Flash Components Division, LSI Corporation. "LSI SHIELD technology helps solve these challenges with advanced error correction that is optimized for SSDs and transforms the latest NAND flash memory into a more robust storage solution."