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IXYS introduces the DVRFD630 and DVRFD631 RF MOSFET gate driver development boards

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Harmeet
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FORT COLLINS, USA: IXYS Corp. a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards by its IXYS Colorado division.

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These general-purpose circuit boards are designed to demonstrate the performance of the IXRFD630 and IXRFD631 RF MOSFET gate drivers, and provide a building block for high-speed power circuit development.

The IXRFD630 or IXRFD631 RF MOSFET gate driver is installed and the boards are factory assembled and tested. Two board configurations are available for either driver - a DE150- or DE275-size MOSFET can be mounted on one board configuration, while the second configuration has a larger footprint pad for a DE375- or DE475-size device.

The board design allows both the driver and the MOSFET to be attached to a heat sink, allowing the assembly to be used as a ground-referenced, low-side power switch for both single-ended and push-pull topologies.Operation of the DVRFD630/631 Development Boards is straightforward, requiring only a 5 volt compatible input signal and 12 volt to 15 volt DC power supply.

DVRFD630/631 Features:

* Supports the IXRFD630 or IXRFD631 RF MOSFET gate drivers

* Drives any size DE Series MOSFET

* Easy to use, requiring only an input signal and supply voltage

* Optimized layout reduces parasitic inductance

* Small overall board size

* Fully assembled and tested

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