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Efforts to develop e-beam direct-write lithography

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CIOL Bureau
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SAN JOSE: Multiple efforts to develop e-beam direct-write lithography have achieved progress, it was reported at the SPIE Advanced Lithography conference.

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However, Kurt Ronse, prominent researcher director of lithography department at IMEC, the nanoelectronics research centre, said at the conference that production tools are at least 5 years away.

Kurt Ronse advised companies and consortiums which develop e-beam direct write technology to target the 16-nm node because the technology will not be commercially viable by the 22-nm node, which is the target of many of the development efforts. He recommended that these groups initially apply their technology to mask-writing tools (where throughput requirement will not be so difficult) as a shorter-term and intermediate step.

According to Kurt Ronse, chip manufacturers are eager to get direct-write lithography, which can reduce or remove the need for photo-masks that are getting more expensive.

He said the resolution of tools is getting closer to acceptable range for the 22-nm and 16-nm nodes, but that overlay control and throughput stay far short of what is required.

The cost of a photo-mask doubles at each new technology node. Analysts and industry executives say that the increasing cost of photo-masks is mainly to blame for the declining ASIC starts.

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