GENEVA, SWITZERLAND: The STW78N65M5 and STW62N65M5 from STMicroelectronics are the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package.
The 650V rating provides greater safety margin when exposed to high-voltage spikes, enhancing the reliability of automotive power and control modules. The two devices’ extremely low on-resistance (RDS(ON)) of 0.032O and 0.049O respectively, combined with the compact TO-247 outline, enhances system energy efficiency and power density.
The new devices owe their industry-leading performance to ST’s MDmesh V super-junction technology, which produces high-voltage devices with very low RDS(ON) per die area allowing smaller package sizes. Gate charge (Qg) and input capacitance are also low, resulting in outstanding Qg x RDS(ON) figure of merit (FOM) with high switching performance and efficiency. In addition, superior avalanche robustness ensures increased ruggedness at sustained high-voltage operation.
MDmesh V combines an innovative proprietary vertical process technology with STMicroelectronics’ proven PowerMESH horizontal architecture, achieving around 50% lower on-resistance than comparable MDmesh II devices.
ST’s 650V automotive-qualified MOSFETs in the TO-247package are in volume production, priced from $ 8.95 for the STW62N65M5 and $ 9.75 for the STW78N65M5, for orders over 1,000 pieces.