SiC MOSFET-based power modules utilizing split output topology

UNTERHACHING, GERMANY: The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes.

As the switching performance demands for new wide band-gap components increases, so do the requirements for the commutation process. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET.

The module behaves in inverter applications in the same way as in a boost circuit. This makes it possible to achieve better performance and efficiency than with a SiC JFET or SiC BJT - and enjoy the added advantage of MOSFET technology's simple gate drive circuit.