GENEVA, SWITZERLAND: STMicroelectronics has successfully manufactured the first functional devices to be built using the CMOS 45nm radio frequency (RF) technology.

This leading-edge technology will be essential for next-generation WLAN applications.

Manufactured on 300mm silicon wafers at Crolles, France, the prototype SoC devices integrate a complete functional chain from the initial detection of the RF signal to the output of digital data ready for subsequent processing. These prototypes deliver state-of-the-art performance and density (only 0.45 square mm for the low noise amplifier, mixer, analog-digital converter and filtering working at 1.1V).

ST's silicon achievement is the result of the company's strategy for CMOS RF derivative technology and reinforces its capability to produce single-chip mobile solutions at the 45nm and 32nm technology nodes. The achievement results from the combination of ST's advanced 45nm CMOS RF derivative technology and its world-leading expertise in RF design, simulation and characterization.

Derivative technologies are proprietary modifications of the standard core-CMOS technology platform that provide added value in specific applications. ST's analog/RF derivative technology allows passive devices such as resistors, capacitors and inductors to be integrated alongside high-performance, high-density digital logic functions.

"The results from the first devices fully confirm the ability of our 45nm RF derivative technology to bring next-generation WLAN connectivity solutions to the market," said Mike Thompson, Group Vice-President of Front-End Technology and Manufacturing, Advanced R&D – High Performance Logic & Derivatives, STMicroelectronics. "The 45nm RF process exemplifies ST's ability to add value to the core CMOS platform by incorporating proprietary process steps that enable the final device to provide applications such as integrated RF/analog functions or various types of embedded memory functions."