Advertisment

RFMD intros MEMS technology for RF, other apps

author-image
CIOL Bureau
Updated On
New Update

NEW YORK, USA: RF Micro Devices, a global leader in the design and manufacture of high-performance RF systems and solutions, has introduced its proprietary micro-electro-mechanical systems, or MEMS, technology for RF and other applications.

Advertisment

RFMD is a pioneer in development of MEMS technology for low-cost, integrated RF applications (RF MEMS) and has been actively engaged in commercialization of MEMS technology since 2004. RFMD expects its proprietary MEMS technology will enable breakthrough performance and unprecedented levels of functional integration in RF and other applications.

The first RF MEMS devices to be introduced by RFMD will be an RF MEMS transmit/receive switch and an RF MEMS mode-switch for 3G multimode handsets. RFMD’s MEMS switch technology will help accelerate 3G deployment by significantly reducing the product footprint and improving efficiency, thereby extending handset talk time. When combined with RFMD’s industry-leading process technologies for front-end solutions (GaAs, SOI and silicon), RFMD’s RF MEMS switch technology will set new standards for low-cost, small size, and very high performance front ends.

RFMD’s MEMS switches will also be used in the output circuit of power amplifiers (PAs) to create a tunable PA, which the company anticipates will enable a truly adaptive transmitter solution.

Advertisment

RFMD’s RF MEMS switches are high-power, ohmic contact MEMS switches that are post-processed above-IC on RF CMOS SOI wafers and are encapsulated in hermetically sealed wafer level packaged (WLP) dielectric domes. All necessary circuitry required for the operation of RF MEMS switches is integrated into the underlying CMOS, including the generation of the large voltages and control signals required for reliable actuation of power MEMS switches.

RF MEMS switches fully support RFMD’s rigorous cellular RF power module requirements, including low insertion loss and high isolation (typically 0.2dB/35dB@1.9GHz) and high harmonic rejection (typically >90dBc), while also meeting stringent requirements for reliability and cost of design and production.

Besides RF MEMS switches, RFMD is also actively pursuing the commercialization of other MEMS devices, such as RF MEMS filters, RF MEMS resonators (crystal replacement) and MEMS sensors. The company expects its MEMS technology, coupled with its existing core competencies in high-performance RF systems, will ultimately enable single-chip front ends and software defined radios (SDRs) capable of accommodating any wireless protocol -- cellular or non-cellular.

RFMD will construct a 200mm R&D wafer fab to support its continued MEMS development. The MEMS R&D fab will be located with RFMD’s GaN R&D organization in a new facility in Mooresville, North Carolina.

semicon