Northrop Grumman intros high power GaN amplifiers

USA: A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corp. has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links.

The APN228 and APN229 power amplifiers were developed with the company's proprietary GaN high-electron mobility transistor (HEMT) power process and provide unmatched saturated output power of 13 and 8 watts, respectively. These second-generation power amplifiers offer the highest power density of any existing Ka-band GaN product on the market.

The broadband, two-stage amplifiers operate from 27 to 31 GHz, and, when integrated in high efficiency solid-state power amplifiers (SSPAs), allow for higher data rate in communication systems.

"GaN-based SSPAs are a far more desirable solution to costly traveling-wave tubes which require more complex, higher voltage power supplies and a lengthier production time," said Frank Kropschot, GM, Microelectronics Products and Services, Northrop Grumman Aerospace Systems.

"APN228 and APN229 will allow our customers to reduce the cost and complexity of power-combining, and offer a significant cost advantage compared to the current generation of Ka-band products," he added.