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New Freescale airfast RF power LDMOS transistors

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Harmeet
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TEXAS, USA: Freescale Semiconductor introduces two new airfast RF power solutions that cover all major cellular infrastructure bands and deliver industry-leading gain in a compact package.

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The AFT27S006N delivers 6 W of peak power and is the next-generation follow-on to the popular MW6S004N product the industry's workhorse driver deployed broadly in world-class wireless infrastructure installations worldwide.

Freescale is also adding a higher power device to this family, called the AFT27S010N, which delivers 10 W of peak power.Both devices feature outstanding frequency range and single-stage gain, together with an ultra-small footprint package making them ideally suited for macro base station MIMO applications rated up to 40 W average power.

Many competitive solutions require customers to deploy multiple RF devices to support this range, but the AFT27S006N and AFT27S010 support this cellular band range with a single power amplifier.

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Lance Wilson, research director for ABI Research said: "These latest additions to Freescale's airfast device portfolio will continue the company's synergistic approach to modern power amplifier design for wireless base stations. Additionally, these driver devices offer excellent performance, ease-of-use and a small footprint."

The airfast technology platform allows Freescale to improve performance in frequency, range and gain while addressing a host of other customer needs such as ease-of-use and flexibility. The broad frequency range of these new transistors means they can also be used as universal driver devices for a wide array of additional RF applications.

Ritu Favre, senior VP and GM of Freescale's RF business said: "With this product introduction, Freescale has taken one of its best RF devices and made it better. Freescale's advanced LDMOS process technology enables our new airfast devices to be smaller and more capable across all major cellular frequency bands."

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