Micron launches DDR4 DRAM module

SAN FRANCISCO, USA: Micron technology has developed its first fully functional DDR4 DRAM module. This year, Micron began sampling the DDR4 module and has received feedback from its big customers to support immediate implementation for applications in 2013.

DDR4 DRAM module is based on Micron's 30-nm technology. The 4-gigabit DDR4 x8 part is the first piece of Micron's portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC). with initial speeds up to 2400 megatransfers per second (MT/s), x8, x16, and x32 components will also be available for the soldered downspace.

This latest module by Micron has been co-developed by Taiwan's Nanya Technology and the volume production of the DDR4 module is planned to begin in the fourth quarter.

"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development. We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production,'' said Brian Shirley, vice president for Micron's DRAM Solutions Group.