Infineon intros OptiMOS fast diode (FD) 200V and 250V

NEUBIBERG, GERMANY: Infineon Technologies complements its Medium Voltage portfolio with the new OptiMOS FD 200V and 250V.

The latest generation of Power MOSFETs is optimized for body diode hard commutation and leads to higher device ruggedness, lower voltage overshoot and reduced reverse recovery loss. This results in highest system reliability especially in hard switching applications such as Telecom Systems, Industrial Power Supplies, Class D Audio Amplifiers, Motor Control (for 48 - 110V systems) and DC/AC inverters.

The OptiMOS FD family provides a reverse recovery charge (Qrr) optimized for the highest standards of performance. OptiMOS FD 200V and 250V achieve a Qrr reduction of 40 percent compared to a standard OptiMOS 200V and 250V. This means a significant leap forward in system reliability by reducing voltage overshoot and thus minimizing the need for a snubber circuit.

Richard Kuncic, senior director System Segment DC/DC at Infineon Technologies, says: "Once again, Infineon has pushed the boundaries in the 200V and 250V voltage classes further. Setting new benchmarks is what keeps us moving forward. With the OptiMOS FD family we continue the successful path of leveraging switching performance. This latest generation of Power MOSFETs saves our customers engineering cost and design effort especially in hard switching applications."