First 8Gb DDR3 components and 16GB unbuffered DIMMs & SO-DIMMs by I'M Intelligent Memory

HONG KONG: I'M Intelligent Memory, a Hong Kong based fabless DRAM manufacturer, announced the availability of the world's first 8 Gigabit (Gb) DDR3 components with a single chip-select, doubling the amount of memory per chip compared to other DDR3 DRAM devices on the market.

Based on these new 8Gb components, I'M is also introducing the first 16 Gigabyte (GB) DDR3 UDIMM and SO-DIMM memory modules with optional ECC error-correction.

The JEDEC specification JESD79-3 has always allowed an 8Gb density for DDR3 memory devices. While most DRAM manufac-tures are waiting for a 2x nm process to fit such high memory ca-pacity into a single DRAM IC package, I'M has developed it's own a revolutionary way to manufacture 8Gb DDR3 components with single chip-select utilizing existing 30nm manufacturing technolo-gies.

The I'M 8Gb components are 100% compatible with the JEDEC standard pinout, timing and row/column/bank addressing, providing the simplest path to higher density DDR3 upgrades. These devices allow for a new level of memory capacity without altering existing board-layouts or designs.

Orderable devices include a x8 (1Gx8) configuration in FBGA 78 ball package, a x16 (512Mx16) type in FBGA 96 ball package as well as a x32 (256Mx32) configuration in FBGA 136 ball package. In addition, I'M offers DDR3L low-voltage (1.35V) versions of these devices. The products are available in commercial and industrial temperature ranges.

Based on their new 8Gb device, I'M releases the very first 16GB DDR3 240 Pin unbuffered DIMMs (UDIMMs) and 204 Pin SO-DIMMs to the market. These new high-capacity memory modules are also available with a 72 Bit width for ECC error correction.