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Cree breakthrough in 150-mm SiC wafers tech

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CIOL Bureau
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SAN JOSE: Cree Inc., LED component and lighting specialist, claims to have achieved a breakthrough in the development and commercialization of silicon carbide (SiC) technology with the demonstration of 150-mm SiC substrates with micropipe densities of less than 10/cm2.

As of now, Cree technology for SiC substrates is 100-mm diameter material. SiC is a semiconductor material that is used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors.

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Sources say that the size advancement of single crystal SiC substrates to 150-mm can facilitate cost reduction and increased throughput.

The company recently announced record revenue of $264.6 million for the fourth quarter of fiscal 2010, ended June 27, 2010. This is a 79 p.c increase compared to revenue of $148.1 million that was posted for the fourth fiscal quarter last year and a 13 p.c increase compared to the third quarter of fiscal 2010.

In the fourth quarter GAAP net income increased 445 p.c year-over-year to $52.8 million, or $0.48 per diluted share, compared to GAAP net income of $9.7 million, or $0.11 per diluted share, for the fourth quarter of fiscal 2009.

For fiscal year 2010, Cree reported revenue of $867.3 million - a 53 p.c increase compared to revenue of $567.3 million for fiscal 2009. GAAP net income increased 402 p.c to $152.3 million, or $1.45 per diluted share, compared to $30.3 million, or $0.34 per diluted share for fiscal 2009.

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