SAN DIEGO: Qualcomm Incorporated announced that it has made the first phone call on a 3G chip manufactured with 45 nanometer (nm) process technology.

The next generation of CMOS semiconductor manufacturing, 45 nm technology enables chips that feature higher speeds, lower power consumption and enhanced integration, all with reduced die cost by providing more die per wafer. Qualcomm's call was made on the first 45 nm chips received from Taiwan Semiconductor Manufacturing Company.

"Thanks to our close strategic foundry partner relationship with TSMC, Qualcomm is able to leverage leading-edge semiconductor process technology to advance wireless communications," said Steve Mollenkopf, senior vice president of product management for Qualcomm CDMA Technologies.

"This milestone call demonstrates our progress toward bringing to market a new generation of chips that will provide users with unprecedented performance and capabilities."

"The first-time silicon success of Qualcomm's 3G product using TSMC's 45 nm process is a testament to the integrated foundry model that calls for end-to-end collaboration. The concurrent design and technology efforts between the two companies has resulted in faster time to market," said Mark Liu, senior vice president of operations II at TSMC.

"The confluence of Qualcomm's excellent designs and TSMC's robust technologies and manufacturing will continue to assure future silicon success."

Qualcomm recently taped out on its low-power-optimized 45 nm process using advanced immersion lithography and extreme low-k inter-metal dielectric material. This process technology provides competitive performance, as well as significant cost efficiency, decreased leakage and increased integration.

The company is also developing 40 nm process technology, which should deliver even greater benefits in semiconductor performance, cost and efficiency.