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SINGAPORE: Fujitsu Microelectronics Asia Ltd (FMAL) announced that Tokyo Institute of Technology (Tokyo-Tech), Fujitsu Laboratories Ltd., and Fujitsu Limited have jointly developed a new material for a new generation of non-volatile Ferroelectric Random Access Memory (FeRAM).

The material is a modified composition of Bismuth Ferrite (BiFeO3 or BFO), which enables data storage capacity up to five times greater than the materials currently used in FeRAM production.

New FeRAMs can be produced with Fujitsu’s 65nm process technology using the BFO-based material in a device structure similar to the one used to build FeRAMs using 180nm technology. FeRAMs using this material can provide memory cell capacity up to 256Mbits.

The new FeRAMs will deliver the very low power consumption and high speeds required for new generations of personalized mobile electronic products such as IC cards, which must be small, easy to use, and provide very high security. The FeRAM technology is the most suitable non-volatile memory device for these kinds of devices and applications.

Engineering sample shipments are planned for 2009.