IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology.
The low-power, 28nm technology platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment. The favorable leakage characteristics of the HKMG technology result in optimized battery life for the next generation of mobile products.
This announcement represents an extension of existing joint development agreements, and further progression in the technology offerings of the alliance partners, building on the success of earlier joint development work in 32nm HKMG technology.
A 28nm low-power technology evaluation kit was previously made available in December 2008 to early access clients, followed by release in March 2009 of an evaluation kit for open access to the general marketplace. Early risk production is anticipated in the second half of 2010.
Preliminary results working with early access clients and partners indicate that the 28nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power -- all in a chip that is half the size -- compared with 45nm technology. The high-k metal gate implementation allows one of the industry's smallest SRAM cells at 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.
These improvements enable microchip designs with outstanding performance, smaller feature sizes and low standby power, contributing to faster processing speed and longer battery life in next-generation mobile Internet devices and other systems.
"This statement of commitment to 28nm low-power technology by the IBM Joint Development Alliance is an important progression from 32nm high-k metal gate technology," said Jorgen Lantto, chief technology officer of ST-Ericsson. "Leaders in the mobile industry can utilize 28nm low-power technology to meet the increasingly aggressive demands for performance and improved battery life."
"28nm low-power technology will provide a significant step function in terms of performance, consumption and density versus the 40nm node, enabling competitive solutions for consumer and automotive segments served by STMicroelectronics," said Jean-Marc Chery, executive vice president, chief technology officer of STMicroelectronics.
