Cypress expands SRAM portfolio

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Cypress expands SRAM portfolio

The new series leverages 0.13-Micron SONOS for performance and reliability

Wednesday, October 07, 2009

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SAN JOSE, USA: Cypress Semiconductor Corp., a provider in semiconductor services, today introduced a new 1-Mbit Serial non-volatile Static Random Access Memory (nvSRAM) family and new 4-Mbit and 8-Mbit nvSRAMs with an integrated real-time clock (RTC).

Cypress's nvSRAMs are manufactured on its S8 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded non-volatile memory technology, enabling greater densities and improved access times and performance, said a press release.

nvSRAMs are ideal solutions for applications requiring absolute non-volatile data security such as RAID systems, industrial control and automation (e.g. PLCs, motion control, motor drives and robotics), single board computers, POS terminals, eMetering, automotive, medical and data communication systems.

The serial nvSRAM family includes 1-Mbit devices in multiple configurations with an industry-standard SPI interface. Available in small-footprint 8-pin DFN and 16-pin SOIC packages, the serial nvSRAMs feature operating frequencies up to 40 MHz. One member of the serial nvSRAM family integrates an RTC as well.

Cypress's parallel nvSRAMs feature access times as low as 20 ns, infinite read, write and recall cycles, and up to 20-years of data retention. The new 4-Mbit and 8-Mbit nvSRAMs integrate an RTC that enables time-stamping of critical data for back-up and also features a programmable alarm function and watchdog timer.

"Our new serial family extends Cypress's industry-leading nvSRAM portfolio to address applications that require high-endurance memories in industry-standard, low-pin count packages," said Jithender Majjiga, senior director of the Non-Volatile Products Business Unit at Cypress.

He added that likewise, integrating a real-time clock in their nvSRAMs enables their portfolio to cover applications traditionally served by BBSRAMs.

Cypress's nvSRAMs are ROHS-compliant and directly replace SRAM, battery-backed SRAM (BBSRAM) and EEPROM devices, offering fast non-volatile data storage without batteries. Data transfers from the SRAM to the device's non-volatile elements take place automatically at power down.

On power up, data is restored to the SRAM from the non-volatile memory. Both operations are also available under software control. nvSRAMs reduce board space and design complexity, the release added.

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