Toshiba SanDisk plan 20nm NAND flash chips

TOKYO, JAPAN: The second half of 2010 will see mass production of NAND flash chips being kicked off by Toshiba and its NAND flash partner SanDisk.

The mass production will focus on churning out NAND flash chips fabricated on 20nm-class process technology.

A Digitimes report quoting industry sources said that SanDisk and Toshiba's joint-venture manufacturing facilities in Yokkaichi in Japan would spruce up capacity to produce around 200,000 wafers a month. This, the report added, will be made possible via technology migration.

Industry observers said that Toshiba had originally expected 32nm to account for over 50 per cent of the total output from Yokkaichi by the end of the current year. It had recently started mass output of 3-bit per cell (3bpc) 32nm devices, it may be recalled. However, the sprucing up has been somehow delayed.

Related reports added that the cost structure of solid-state drive (SSD) would go up with NAND flash chips produced on 2Xnm. This would be made possible its replacement for hard drives. In tune with such a trend, Toshiba’s rival players Intel and Micron Technology have already hopped on to the bandwagon hoping to introduce 2xnm technology later in 2009.

Samsung Electronics is also said to be also initiating measures to boost the solid-state drive (SSD) market, and is upgrading its 8-inch fab in Austin into a 12-inch fab for producing more NAND flash chips from the second half of 2010.

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