The company has successfully developed its own flash memory technology as a result of a deal involving technology license with Renesas Technology. The DRAM manufacturer based in Taiwan had said that its major process technology for making NAND flash chips was now 70 nm and that it had already manufactured 8 Gb products with 50 nm technology.

Last year, PSC was one of the competitors in a bid to secure government funding through a DRAM-rescuing project. The company was seeking a NT$4.5 million budget to build a new NAND flash company, but the project was later denied funding by lawmakers.

The company will also shift to using 63 nm process technology. This will enable the company to cut costs by 20%. Shifting to 45 nm technology will take place depending on when immersion scanner equipment from ASML can be delivered to the company. Huang admitted that there was already a delay in delivery.

Huang also opined that the prices of DRAM were reasonable at the moment and that the market for DRAM would improve in 2011.