NEC Toshiba in IBM alliance for 28nm tech

BANGALORE, INDIA: In a bid aimed at participating more in the development of a 28-nanometer, high-k metal gate, low-power chip technology geared for consumer products, technology development agreements have been inked between IBM Corporation, NEC Electronics Corporation and Toshiba Corporation.

The development brings NEC Electronics and Toshiba into the IBM technology alliance to develop the 28nm bulk complementary metal oxide semiconductor (CMOS) process technology.

According to a wire report, low-power, 28nm technology can contribute to faster processing speed and longer battery life in next-generation mobile communication devices and other consumer electronics applications. The alliance is keeping in line with the success of earlier joint development work in 32nm high-k metal gate technology.

As per this, clients can effect a transition to 28nm technology without the need for a major redesign, with lower risk, reduced cost and faster time-to-market, it said. It has also been pointed out that internal test results have shown the power-efficient advantages of high-k metal gate and device performance.

The advanced 28nm low-power process technology will dramatically enhance the product's density, performance, as well as power consumption compared to the former 40nm node, providing highly competitive solutions, especially in the fields of consumer electronics and automotive, the report pointed out.

The new alliance will be based at IBM's facility in East Fishkill, New York.

With the new agreement now on, NEC Electronics and Toshiba are expected to channel skills and resources to aid development of an industry-leading 28nm technology. Industry analysts believe that the alliance partners will deliver a high-performance, energy efficient technology to enable a full range of multifunction, power-sensitive mobile and consumer electronics.

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