ProMOS begins trial output of 1Gb DDR3 products

ProMOS begins trial output of 1Gb DDR3 products

According to reports quoting ProMOS brass, the trials were undertaken by deploying 63nm stack technology at the CTSP facility in March.

Tuesday, June 22, 2010

TAIPEI, TAIWAN: Trial manufacturing of 1Gb DDR3 DRAM products has been successfully undertaken by ProMOS Technologies at its 12-inch wafer fab at the Central Taiwan Science Park (CTSP). The process employed Elpida Memory's 63nm (65nm-XS, Super-shrink) technology.

Also read: ProMOS begins trial output of 1Gb DDR3 products

According to ProMOS sources, the first lot of trial production has revealed that device parameters are within product specifications and the product is fully compatible for applications in PC, digital consumer and mobile markets. According to reports quoting ProMOS brass, the trials were undertaken by deploying 63nm stack technology at the CTSP facility in March. It is expected that volume production would begin soon.

Also read: ProMOS Technologies may set up plant in China

ProMOS has said its monthly production for Elpida's 1Gb DDR3 is expected to reach 35,000 wafer starts by the end of 2010. the company would be deploying Elpida's 45nm technology in the second half of 2011.

Meanwhile, related reports added that it would also look at going in for an expansion of production capacity at its 12-inch fab to 80,000 wafers a month by the end of 2010. The company had earlier owned two 12-inch DRAM fabs, and during the start of the year had sold off the fab at the Hsinchu Science Park (HSP) to Macronix International, a maker of ROM and NOR flash chips.

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